PKL0107 p-ch 10 0v fast switching mosfets 1 symbol parameter rating units v ds drain - source voltage -100 v v gs gate - sou r ce voltage 2 0 v i d @t a =25 continuous drain current, v gs @ -10v 1 - 1.5 a i d @t a = 7 0 continuous drain current, v gs @ -10v 1 - 1.2 a i dm pulsed drain current 2 - 4.5 a p d @t a =25 total power dissipation 3 1 .5 w t stg storage temperature range - 55 to 150 t j operating junction te mperature range - 55 to 150 symbol parameter typ. max. unit r ja th ermal resistance junction-ambient 1 --- 85 /w r jc thermal resistance junction-case 1 --- 36 /w bvdss rds on id - 10 0 v 0.65 - 1.5 a the PKL0107 is the high cell density trenched p - ch mosfets, which provide excellent rdson and gate charge for most of the synchronous buck converter applications. the PKL0107 meet the rohs and green product requiremen t with full function reliability approved. ? super low gate charge ? green device available ? excellent cdv/dt effect decline ? advanced high cell density trench technology description absolute maximum ratings thermal data sot2 23 pin configuration product summa ry 1 www.paceleader.tw
p - ch 10 0v fast switching mosfets 2 2 symbol parameter conditions min. typ. max. unit bv dss drain - source bre akdown voltage v gs =0v , i d = - 250ua - 10 0 --- --- v e bv dss / e t j bvdss temperature coefficient reference to 25 , i d = - 1ma --- - 0.0 6 24 --- v/ r ds(on) static drain - source on - resistance 2 v gs = - 10v , i d = - 1 a --- 0.52 0.65 : v gs = - 4.5v , i d = - 0.5 a --- 0.56 0.7 v gs(th) gate threshold voltage v gs =v ds , i d = - 250ua - 1.0 - 1.5 - 2.5 v e v gs(th) v gs(th) temperature coefficient --- 4. 5 --- mv/ i dss drain - source leakage current v ds = - 80 v , v gs =0v , t j =25 --- --- 1 0 ua v ds = - 80 v , v gs =0v , t j =55 --- --- 100 i gss gat e - source leakage current v gs = f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds = - 5 v , i d = - 1 a --- 2.9 --- s r g gate resistance v ds = 0 v , v gs =0v , f=1mhz --- 16 32 : q g total gate charge ( - 10 v) v ds = - 5 0 v , v gs = - 10 v , i d = - 1 a --- 9. 3 --- nc q gs g ate - source charge --- 1. 75 --- q gd gate - drain charge --- 1. 25 --- t d(on) turn - on delay time v dd = - 50 v , v gs = - 10 v , r g = 3.3 : i d = - 0.5 a --- 2 --- ns t r rise time --- 18.4 --- t d(off) turn - off delay time --- 19.6 --- t f fall time --- 19.6 --- c is s input capacitance v ds = - 1 5v , v gs =0v , f=1mhz --- 5 53 --- pf c oss output capacitance --- 29 --- c rss reverse transfer capacitance --- 20 --- symbol parameter conditions min. typ. max. unit i s continuous source current 1 , 4 v g =v d =0v , force cur rent --- --- - 1.5 a i sm pulsed source current 2 , 4 --- --- - 4.5 a v sd diode forward voltage 2 v gs =0v , i s = - 1 a , t j =25 --- --- - 1.2 v t rr reverse recovery time if= - 1 a , d i /dt=100a/s , t j =25 --- 27 --- ns q rr reverse recovery charge --- 36 --- nc electrical character istics (t j =25 , unless otherwise noted) diode characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr - 4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , i n real applications , should be limited by total power dissipation. PKL0107 2 www.paceleader.tw
p - ch 10 0v fast switching mosfets 0.0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 8 -v ds ,drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 500 510 520 530 540 550 2 4 6 8 10 -v gs (v) r dson (m) 3 www.paceleader.tw 0.0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 8 -v ds ,drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 500 510 520 530 540 550 2 4 6 8 10 -v gs (v) r dson p
i d =1a 0 0.5 1 1.5 0.00 0.25 0.50 0.75 1.00 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 0 2.5 5 7.5 10 0 2.5 5 7.5 10 q g , total gate charge (nc) -v gs gate to source voltage (v) i d =-1a v ds =-25v v ds =-50v v ds =-75v 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( w ) normalized v gs(th) (v) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( w ) normalized on resistance
p - ch 10 0v fast switching mosfets 10 100 1000 1 5 9 13 17 21 25 -v ds ,drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.010 0.100 1.000 10.000 0.1 1 10 100 1000 -v ds (v) -i d (a) t a =25 jc 4 www.paceleader.tw 10 100 1000 1 5 9 13 17 21 25 -v ds ,drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.010 0.100 1.000 10.000 0.1 1 10 100 1000 -v ds (v) -i d (a) t a =25 w single pulse 1s 1ms 10ms 100ms dc 100us 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r - $ ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr - & t on t t d ( o n ) t r t o n t d ( o f f ) t f t o f f v d s v g s 9 0 % 1 0 %
PKL0107 p - ch 10 0v fast switching mosfets p a c k a g e i n f o r m a t i o n ( s o t - 2 2 3 ) 5 www.paceleader.tw
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